The LM5112 MOSFET gate driver provides high peak gate
drive current in the tiny LLP-6 package (SOT23 equivalent
footprint) or an 8-Lead exposed-pad MSOP package, with
improved power dissipation required for high frequency operation.
The compound output driver stage includes MOS
and bipolar transistors operating in parallel that together sink
more than 7A peak from capacitive loads. Combining the
unique characteristics of MOS and bipolar devices reduces
drive current variation with voltage and temperature. Undervoltage
lockout protection is provided to prevent damage to
the MOSFET due to insufficient gate turn-on voltage. The
LM5112 provides both inverting and non-inverting inputs to
satisfy requirements for inverting and non-inverting gate
drive with a single device type.