二維材料系統(tǒng)可實(shí)現(xiàn)單光子發(fā)射器和自旋量子比特,為新型量子現(xiàn)象和技術(shù)應(yīng)用開辟了一個嶄新的舞臺。例如,二維六方氮化硼結(jié)構(gòu)可容納穩(wěn)定的單光子發(fā)射器和自旋三重態(tài)缺陷結(jié)構(gòu),因而引起了人民的廣泛關(guān)注。
然而,這些量子缺陷的不可控性及化學(xué)性質(zhì)的不確定性阻礙了其進(jìn)一步發(fā)展。通過引入能精確調(diào)控的外部缺陷,可以彌補(bǔ)量子缺陷化學(xué)性質(zhì)的不確定性問題。
來自美國加州大學(xué)戴維斯分校物理系的Ping Yuan教授,提出了一套完整的理論框架來識別寬帶隙二維材料系統(tǒng)中的量子缺陷,可用于單光子發(fā)射體和自旋比特的設(shè)計(jì)。他們通過用第一性原理方法計(jì)算了h-BN材料系統(tǒng)的缺陷能量,確定了具有三重態(tài)的缺陷結(jié)構(gòu),通過分析次級量子自旋的零場分裂,對相關(guān)能級進(jìn)行了控制。
此外,根據(jù)缺陷躍遷和輻射壽命,他們篩選出了h-BN中潛在的單光子發(fā)射器缺陷結(jié)構(gòu)。該理論框架考慮了缺陷-激子耦合等多體相互作用,并計(jì)算了每個缺陷的電子結(jié)構(gòu)和光譜。通過考慮Huang-Rhys近似之外的聲子波函數(shù)重疊,作者開發(fā)了一種計(jì)算非輻射系統(tǒng)間交叉速率的方法。這項(xiàng)工作為二維材料中缺陷設(shè)計(jì)提供了一套完整的第一性原理理論框架,并為二維材料在量子信息科學(xué)中的應(yīng)用提供了參考。
該文近期發(fā)表于npj Computational Materials 7: 59 (2021),英文標(biāo)題與摘要如下。
Despite the recognition of two-dimensional (2D) systems as emerging and scalable host materials of single-photon emitters or spin qubits, the uncontrolled, and undetermined chemical nature of these quantum defects has been a roadblock to further development. Leveraging the design of extrinsic defects can circumvent these persistent issues and provide an ultimate solution.
Here, we established a complete theoretical framework to accurately and systematically design quantum defects in wide-bandgap 2D systems. With this approach, essential static and dynamical properties are equally considered for spin qubit discovery.
In particular, many-body interactions such as defect–exciton couplings are vital for describing excited state properties of defects in ultrathin 2D systems. Meanwhile, nonradiative processes such as phonon-assisted decay and intersystem crossing rates require careful evaluation, which competes together with radiative processes.
From a thorough screening of defects based on first-principles calculations, we identify promising single-photon emitters such as SiVV and spin qubits such as TiVV and MoVV in hexagonal boron nitride. This work provided a complete first-principles theoretical framework for defect design in 2D materials.
編輯:jq
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原文標(biāo)題:npj: 二維材料中量子缺陷—理論設(shè)計(jì)框架
文章出處:【微信號:zhishexueshuquan,微信公眾號:知社學(xué)術(shù)圈】歡迎添加關(guān)注!文章轉(zhuǎn)載請注明出處。
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